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SST39SF040-70-4C-PHE - 

Flash Memory, 4 Mbit, 512K x 8bit, Parallel, DIP, 32 Pins

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Manufacturer:
MICROCHIP MICROCHIP
Manufacturer Part No:
SST39SF040-70-4C-PHE
Newark Part No.:
92R4729
Product Range
5V Parallel NOR Flash Memories
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
4Mbit
:
0°C
:
Each
:
70°C
:
Parallel
:
70ns
:
-
:
32Pins
:
DIP
:
4.5V
:
5V Parallel NOR Flash Memories
:
5.5V
:
512K x 8bit
:
-
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Product Overview

The SST39SF040-70-4C-PHE is a CMOS Multi-purpose Flash (MPF) device manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 write (program or erase) with a 4.5 to 5.5V power supply and conforms to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39SF040 device provide a maximum Byte-Program time of 20μsec. This device use toggle bit or data# polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.
  • Latched address and data
  • Automatic write timing - Internal VPP generation
  • End-of-write detection - Toggle bit-data# polling
  • Sector-erase capability - Uniform 4kB sectors
  • 10mA (typical) Active current
  • 30µA (typical) Standby current

Applications

Industrial