LTC1155CS8#PBF - 

Dual MOSFET Driver IC, High Side, 4.5V-18V Supply, 26 µs Delay, SOIC-8

LTC1155CS8#PBF - Dual MOSFET Driver IC, High Side, 4.5V-18V Supply, 26 µs Delay, SOIC-8

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Manufacturer Part No:
Newark Part No.:

Product Information

High Side
MSL 1 - Unlimited
To Be Advised
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Product Overview

The LTC1155CS8#PBF is a dual high-side Gate Driver allows using N-channel FETs for high-side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micro-power operation with 8µA standby current and 85µA operating current allows use in virtually all systems with maximum efficiency. Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. The LTC1155 operates off of a 4.5 to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micro-power sleep operation is required.
  • Short-circuit protection
  • Controlled switching ON and OFF times
  • No external charge pump components
  • Replaces P-channel high-side MOSFETs
  • Compatible with standard logic families
  • Fully enhances N-channel power MOSFETs


Power Management, Computers & Computer Peripherals, Consumer Electronics, Motor Drive & Control, Portable Devices

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