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KNOWLEDGE-ON  OPE5587  Infrared Emitter, 10 °, T-1 3/4 (5mm), 50 mA, 1.5 V, 25 ns, 15 ns

KNOWLEDGE-ON OPE5587
Technical Data Sheet (194.80KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The OPE5587 is an Infrared Emitting Diode with GaA1As construction. It is designed for high power, low forward voltage and high speed rise/fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. Especially this device is suited as the emitter of data transmission without cable.
  • 880nm Wavelength
  • Narrow beam angle
  • Low forward voltage
  • High power and high reliability
  • Available for pulse operating

 

Product Information

Viewing Angle:
10°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
50mA
Forward Voltage VF Max:
1.5V
Rise Time:
25ns
Fall Time tf:
15ns
Operating Temperature Min:
-25°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
Peak Wavelength:
880 nm
No. of Pins:
2
Radiant Intensity:
50 mW/Sr
MSL:
-
Supply Voltage Range:
1.5V
SVHC:
To Be Advised

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Applications

  • Consumer Electronics;
  • Communications & Networking;
  • Wireless

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Independent Distributor

Substitutes

Infrared Emitter, High Power, 50 mA, 25 ns, 15 ns, 20 , 2 V, -25 C

KODENSHI

1,117:  in stock

Price for: Each

1+ $0.771 250+ $0.582 500+ $0.519 1000+ $0.467 More pricing

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