Low

KNOWLEDGE-ON  OPE5587  Infrared Emitter, 10 °, T-1 3/4 (5mm), 50 mA, 1.5 V, 25 ns, 15 ns

KNOWLEDGE-ON OPE5587

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The OPE5587 is an Infrared Emitting Diode with GaA1As construction. It is designed for high power, low forward voltage and high speed rise/fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. Especially this device is suited as the emitter of data transmission without cable.
  • 880nm Wavelength
  • Narrow beam angle
  • Low forward voltage
  • High power and high reliability
  • Available for pulse operating

Applications

Consumer Electronics; Communications & Networking; Wireless

Customers Also bought

Product Information

Viewing Angle:
10°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
50mA
Forward Voltage VF Max:
1.5V
Rise Time:
25ns
Fall Time tf:
15ns
Operating Temperature Min:
-25°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
Peak Wavelength:
880 nm
No. of Pins:
2
Radiant Intensity:
50 mW/Sr
MSL:
-
Supply Voltage Range:
1.5V
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Consumer Electronics;
  • Communications & Networking;
  • Wireless

Substitutes

Infrared Emitter, High Power, 50 mA, 25 ns, 15 ns, 20 , 2 V, -25 C

KODENSHI

1,835: 

Price for: Each

1+ $0.772 250+ $0.583 500+ $0.519 1000+ $0.468 More pricing

Buy

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Recently Viewed

Product Recommendations