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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF640NLPBFCopy
Newark Part No.63J7350
Product RangeHEXFET
Also Known AsSP001563296
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id18A
Drain Source On State Resistance150mohm
On Resistance Rds(on)0.15ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Power Dissipation Pd150W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation150W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
150mohm
Transistor Case Style
TO-262
Power Dissipation Pd
150W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
18A
On Resistance Rds(on)
0.15ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
150W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate