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IXFH6N100 - 

Power MOSFET, N Channel, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR IXFH6N100

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Manufacturer Part No:
IXFH6N100
Newark Part No.:
97K2544
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
180W
:
4.5V
:
150°C
:
6A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-247
:
2ohm
:
1kV
:
-
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Product Overview

The IXFH6N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance and fast intrinsic rectifier.
  • International standard package
  • Rugged polysilicon gate cell structure
  • Unclamped inductive switching (UIS) rated
  • Low RDS (ON) HDMOS™ process
  • High dV/dt and low trr

Applications

Power Management, Industrial, Motor Drive & Control

Substitutes

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VISHAY

Power MOSFET, N Channel, 6.1 A, 1 kV, 2 ohm, 10 V, 4 V

212 in stock
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