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IXYS SEMICONDUCTOR  IXFH6N100  Power MOSFET, N Channel, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR IXFH6N100
Technical Data Sheet (77.80KB) EN See all Technical Docs

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Product Overview

The IXFH6N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance and fast intrinsic rectifier.
  • International standard package
  • Rugged polysilicon gate cell structure
  • Unclamped inductive switching (UIS) rated
  • Low RDS (ON) HDMOS™ process
  • High dV/dt and low trr

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6A
Drain Source Voltage Vds:
1kV
On Resistance Rds(on):
2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4.5V
Power Dissipation Pd:
180W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Power MOSFET, N Channel, 6.1 A, 1 kV, 2 ohm, 10 V, 4 V

VISHAY

251 in stock

Price for: Each

1+ $7.87 10+ $6.47 100+ $5.91 250+ $5.34 More pricing

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