IXYS RF  IXZ308N120  RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375


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  • Manufacturer:
  • Newark Part No.: 42M1944
  • Manufacturer Part No IXZ308N120

Product Overview

The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density


HVAC; Power Management; Industrial
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Product Specifications, Documents & More

  • Continuous Drain Current Id: 8A
  • Drain Source Voltage Vds: 1.2kV
  • MSL: -
  • No. of Pins: 6
  • Operating Frequency Max: -
  • Operating Frequency Min: -
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 880W
  • RF Transistor Case: DE-375
  • SVHC: To Be Advised
  • Transistor Type: RF MOSFET


Availability:  17

  • 17 in stock for same day shipping
Check stock and lead times
  • 13 Further stock expected to ship on Dec 17, 2015
  • More stock available week commencing 4/11/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $51.39 $51.39



Quantity List Price
1 - 24 $51.39
25 - 49 $48.95
50 - 99 $46.70
100 - 249 $45.28
250+ $43.85

Legislation and Environmental

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