IXYS RF  IXZ308N120  RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375


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  • Manufacturer:
  • Newark Part No.: 42M1944
  • Manufacturer Part No IXZ308N120

Product Overview

The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density


HVAC; Power Management; Industrial
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Product Information

  • Drain Source Voltage Vds 1.2kV
  • Continuous Drain Current Id 8A
  • Power Dissipation Pd 880W
  • Operating Frequency Min -
  • Operating Frequency Max -
  • RF Transistor Case DE-375
  • No. of Pins 6Pins
  • Operating Temperature Max 175°C
  • Transistor Type RF MOSFET
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised


Availability:  29

  • 29 in stock for same day shipping
Check stock and lead times
  • 15 Further stock expected to ship on May 16, 2016
  • More stock available week commencing 9/19/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $52.21 $52.21



Quantity List Price
1 - 24 $52.21
25 - 49 $49.72
50 - 99 $47.45
100 - 249 $46.00
250+ $44.55

Legislation and Environmental

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