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IXZ308N120 - 

RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375

IXZ308N120 - RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375

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Manufacturer:
IXYS RF IXYS RF
Manufacturer Part No:
IXZ308N120
Newark Part No.:
42M1944
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

Applications

HVAC, Power Management, Industrial

Product Information

:
1.2kV
:
8A
:
880W
:
-
:
-
:
DE-375
:
6Pins
:
175°C
:
-
:
-
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