Low

IXYS RF  IXZ308N120  RF FET Transistor, 1.2 kV, 8 A, 880 W, DE-375

IXYS RF IXZ308N120
Technical Data Sheet (142.37KB) EN See all Technical Docs

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Product Overview

The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

 

Product Information

Drain Source Voltage Vds:
1.2kV
Continuous Drain Current Id:
8A
Power Dissipation Pd:
880W
Operating Frequency Min:
-
Operating Frequency Max:
-
RF Transistor Case:
DE-375
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • HVAC;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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