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IXYS RF  IXFN55N50F  RF FET Transistor, 500 V, 55 A, 600 W, 500 kHz, SOT-227B

IXYS RF IXFN55N50F
Technical Data Sheet (106.38KB) EN See all Technical Docs

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Product Information

Drain Source Voltage Vds:
500V
Continuous Drain Current Id:
55A
Power Dissipation Pd:
600W
Operating Frequency Min:
-
Operating Frequency Max:
500kHz
RF Transistor Case:
SOT-227B
No. of Pins:
4Pins
Operating Temperature Max:
150°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

STE53NC50

MOSFET Transistor, N Channel, 53 A, 500 V, 80 mohm, 10 V, 3 V

STMICROELECTRONICS

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STE48NM50

POWER MOSFET

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