IXYS RF  DE275X2-102N06A  RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2

IXYS RF DE275X2-102N06A

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  • Manufacturer:
  • Newark Part No.: 42M1755
  • Manufacturer Part No DE275X2-102N06A

Product Overview

The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • N-channel enhancement mode
  • Common source push-pull pair
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching
  • Low insertion inductance


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Product Specifications, Documents & More

  • Continuous Drain Current Id: 16A
  • Drain Source Voltage Vds: 1kV
  • MSL: -
  • No. of Pins: 8
  • Operating Frequency Max: 100MHz
  • Operating Frequency Min: -
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 1.18kW
  • RF Transistor Case: DE-275X2
  • SVHC: To Be Advised
  • Transistor Type: RF MOSFET


Availability:  35

  • 35 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/30/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $61.57 $61.57



Quantity List Price
1 - 24 $61.57
25 - 49 $58.64
50 - 99 $55.95
100 - 249 $54.24
250+ $52.53

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