Low

DE275X2-102N06A - 

RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2

DE275X2-102N06A - RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2

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Manufacturer:
IXYS RF IXYS RF
Manufacturer Part No:
DE275X2-102N06A
Newark Part No.:
42M1755
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • N-channel enhancement mode
  • Common source push-pull pair
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching
  • Low insertion inductance

Applications

RF Communications

Product Information

:
1kV
:
16A
:
1.18kW
:
-
:
100MHz
:
DE-275X2
:
8Pins
:
175°C
:
-
:
-
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