Low

IXYS RF  DE275X2-102N06A  RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2

IXYS RF DE275X2-102N06A

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Product Overview

The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • N-channel enhancement mode
  • Common source push-pull pair
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching
  • Low insertion inductance

Applications

RF Communications

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Product Information

Drain Source Voltage Vds:
1kV
Continuous Drain Current Id:
16A
Power Dissipation Pd:
1.18kW
Operating Frequency Min:
-
Operating Frequency Max:
100MHz
RF Transistor Case:
DE-275X2
No. of Pins:
8Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • RF Communications

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