IXYS RF  DE275X2-102N06A  RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2

IXYS RF DE275X2-102N06A

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  • Manufacturer:
  • Newark Part No.: 42M1755
  • Manufacturer Part No DE275X2-102N06A

Product Overview

The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
  • N-channel enhancement mode
  • Common source push-pull pair
  • Low Qg and Rg
  • High dv/dt rating
  • Nanosecond switching
  • Low insertion inductance


RF Communications
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Product Information

  • Drain Source Voltage Vds 1kV
  • Continuous Drain Current Id 16A
  • Power Dissipation Pd 1.18kW
  • Operating Frequency Min -
  • Operating Frequency Max 100MHz
  • RF Transistor Case DE-275X2
  • No. of Pins 8Pins
  • Operating Temperature Max 175°C
  • Transistor Type RF MOSFET
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC To Be Advised


Availability:  23

  • 23 in stock for same day shipping
Check stock and lead times
  • 14 Further stock expected to ship on May 19, 2016
  • More stock available week commencing 8/15/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $67.52 $67.52



Quantity List Price
1 - 24 $67.52
25 - 49 $64.30
50 - 99 $61.35
100 - 249 $59.48
250+ $57.60

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