IXYS RF  DE275-501N16A  RF FET Transistor, 500 V, 16 A, 590 W, 100 MHz, DE-275

IXYS RF DE275-501N16A

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  • Manufacturer:
  • Newark Part No.: 42M1754
  • Manufacturer Part No DE275-501N16A

Product Overview

The DE275-501N16A is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density


Power Management; Industrial
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Product Specifications, Documents & More

  • Continuous Drain Current Id: 16A
  • Drain Source Voltage Vds: 500V
  • MSL: -
  • No. of Pins: 6
  • Operating Frequency Max: 100MHz
  • Operating Frequency Min: -
  • Operating Temperature Max: 175°C
  • Power Dissipation Pd: 590W
  • RF Transistor Case: DE-275
  • SVHC: To Be Advised
  • Transistor Type: RF MOSFET


Availability:  54

  • 54 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 5/23/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $30.79 $30.79



Quantity List Price
1 - 24 $30.79
25 - 49 $29.32
50 - 99 $27.98
100 - 249 $27.12
250+ $26.27

Legislation and Environmental

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