Low

IXYS RF  DE275-501N16A  RF FET Transistor, 500 V, 16 A, 590 W, 100 MHz, DE-275

IXYS RF DE275-501N16A
Technical Data Sheet (168.68KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The DE275-501N16A is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

 

Product Information

Drain Source Voltage Vds:
500V
Continuous Drain Current Id:
16A
Power Dissipation Pd:
590W
Operating Frequency Min:
-
Operating Frequency Max:
100MHz
RF Transistor Case:
DE-275
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
RF MOSFET
MSL:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Independent Distributor

Associated Products

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