IXYS RF  DE275-501N16A  RF FET Transistor, 500 V, 16 A, 590 W, 100 MHz, DE-275

IXYS RF DE275-501N16A

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  • Manufacturer:
  • Newark Part No.: 42M1754
  • Manufacturer Part No DE275-501N16A

Product Overview

The DE275-501N16A is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density


Power Management; Industrial
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Product Information

  • Drain Source Voltage Vds 500V
  • Continuous Drain Current Id 16A
  • Power Dissipation Pd 590W
  • Operating Frequency Min -
  • Operating Frequency Max 100MHz
  • RF Transistor Case DE-275
  • No. of Pins 6Pins
  • Operating Temperature Max 175°C
  • Transistor Type RF MOSFET
  • MSL -
  • SVHC To Be Advised


Availability:  59

  • 59 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 8/15/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $33.76 $33.76



Quantity List Price
1 - 24 $33.76
25 - 49 $32.15
50 - 99 $30.68
100 - 249 $29.74
250+ $28.80

Legislation and Environmental

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