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DE275-501N16A - 

RF FET Transistor, 500 V, 16 A, 590 W, 100 MHz, DE-275

IXYS RF DE275-501N16A

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Manufacturer:
IXYS RF IXYS RF
Manufacturer Part No:
DE275-501N16A
Newark Part No.:
42M1754
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The DE275-501N16A is a 500V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for Class C, D and E applications. This MOSFET can also be used in laser driver, induction heating, switch mode power supplies and switching industrial applications.
  • High isolation voltage
  • Excellent thermal transfer
  • Increased temperature and power cycling capability
  • IXYS advanced low Qg process
  • Low gate charge and capacitances offer easier to drive and faster switching
  • Very low insertion inductance
  • No beryllium oxide (BeO) or other hazardous materials
  • Easy to mount, no insulators needed
  • High power density

Applications

Power Management, Industrial

Product Information

:
500V
:
16A
:
590W
:
-
:
100MHz
:
DE-275
:
6Pins
:
175°C
:
-
:
-
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