HIP2100IBZ - 

Dual Power Driver, Half Bridge, 9V-14V Supply, 2A Out, 20ns Delay, SOIC-8

HIP2100IBZ - Dual Power Driver, Half Bridge, 9V-14V Supply, 2A Out, 20ns Delay, SOIC-8

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Manufacturer Part No:
Newark Part No.:
Technical Datasheet:
No Longer Manufactured
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Product Information

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Product Overview

The HIP2100IBZ is a 100V high frequency half bridge N-channel power MOSFET Driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under-voltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary under-voltage of the high-side supply.
  • Drives N-channel MOSFET half bridge
  • Bootstrap supply maximum voltage to 114VDC
  • On-chip 1Ω bootstrap diode
  • Fast propagation times for multi-MHz circuits
  • Drives 1000pF load with rise and fall times typical 10ns
  • CMOS input thresholds for improved noise immunity
  • Independent inputs for non-half bridge topologies
  • No start-up problems
  • Outputs unaffected by supply glitches, HS ringing below ground or HS slewing at high dv/dt
  • Low power consumption
  • Wide supply range
  • Supply under-voltage protection
  • 3Ω Driver output resistance
  • Near chip scale package footprint, which improves PCB efficiency and has a thinner profile


Power Management


ESD sensitive device, take proper precaution while handling the device.


Associated Products

No Longer Manufactured

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