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INFINEON  IRLZ24NPBF  MOSFET Transistor, N Channel, 18 A, 55 V, 60 mohm, 10 V, 2 V

INFINEON IRLZ24NPBF
INFINEON IRLZ24NPBF
Technical Data Sheet (180.63KB) EN See all Technical Docs

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INFINEON IRLZ24NPBF
INFINEON IRLZ24NPBF

Product Overview

The IRLZ24NPBF is a 55V single N-channel HEXFET Power MOSFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
  • Logic-level gate drive
  • Advanced process technology
  • Dynamic dv/dt rating
  • Fast switching
  • Fully avalanche rated
  • Planar MOSFET technology
  • Industry-leading quality
  • ±16V Gate to source voltage
  • 0.30W/°C Linear derating factor
  • 11A Avalanche current (IAR)
  • 3.3°C/W Thermal resistance, junction to case
  • 62°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
45W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Commercial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 30 A, 55 V, 35 mohm, 10 V, 2 V

INFINEON

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