INTERNATIONAL RECTIFIER  IRLR2908PBF  MOSFET Transistor, N Channel, 30 A, 80 V, 28 mohm, 10 V, 2.5 V


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Product Overview

The IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax
  • 175°C Operating temperature


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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 30A
  • Drain Source Voltage Vds 80V
  • On Resistance Rds(on) 0.028ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 2.5V
  • Power Dissipation Pd 120W
  • Transistor Case Style TO-252
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL MSL 1 - Unlimited
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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Availability:  203

  • 203 in stock for same day shipping
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    More stock available week commencing 6/13/16

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Price: $1.80 $1.8



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500 - 999 $0.725
1000+ $0.681

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