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INTERNATIONAL RECTIFIER  IRLR2908PBF  MOSFET Transistor, N Channel, 30 A, 80 V, 28 mohm, 10 V, 2.5 V

INTERNATIONAL RECTIFIER IRLR2908PBF

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Product Overview

The IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax
  • 175°C Operating temperature

Applications

Automotive

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
30A
Drain Source Voltage Vds:
80V
On Resistance Rds(on):
0.028ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.5V
Power Dissipation Pd:
120W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex

Applications

  • Automotive

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