Low

IRLR2908PBF - 

MOSFET Transistor, N Channel, 30 A, 80 V, 28 mohm, 10 V, 2.5 V

INFINEON IRLR2908PBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRLR2908PBF
Newark Part No.:
63J7635
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
120W
:
2.5V
:
-
:
175°C
:
30A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-252
:
28mohm
:
80V
:
MSL 1 - Unlimited
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Product Overview

The IRLR2908PBF is a 80V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax
  • 175°C Operating temperature

Applications

Automotive

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