Low

INFINEON  IRLL014NTRPBF  MOSFET Transistor, Hexfet, N Channel, 2 A, 55 V, 140 mohm, 10 V, 2 V

INFINEON IRLL014NTRPBF
Technical Data Sheet (261.27KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The IRLL014NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
  • Advanced process technology
  • Dynamic dV/dt rating
  • Fast switching
  • Fully avalanche rating
  • Low static drain-to-source ON-resistance
  • Logic level

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
2A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.14ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
2.1W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex
Authorized Distributor

Associated Products