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IRGB6B60KDPBF - 

IGBT Single Transistor, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 Pins

INFINEON IRGB6B60KDPBF
INFINEON IRGB6B60KDPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRGB6B60KDPBF
Newark Part No.:
63J7445
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The IRGB6B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
  • Low diode VF
  • Square RBSOA
  • Positive VCE (on) temperature coefficient
  • Rugged transient performance
  • Low EMI
  • Excellent current sharing in parallel operation
  • 10μs Short-circuit capability

Applications

Motor Drive & Control, Consumer Electronics, Lighting, Alternative Energy, Power Management

Product Information

:
13A
:
1.8V
:
90W
:
600V
:
TO-220AB
:
3Pins
:
150°C
:
-
:
-
:
-
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