Low

INFINEON  IRGB6B60KDPBF  IGBT Single Transistor, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 Pins

INFINEON IRGB6B60KDPBF
INFINEON IRGB6B60KDPBF
Technical Data Sheet (310.74KB) EN See all Technical Docs

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INFINEON IRGB6B60KDPBF
INFINEON IRGB6B60KDPBF

Product Overview

The IRGB6B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
  • Low diode VF
  • Square RBSOA
  • Positive VCE (on) temperature coefficient
  • Rugged transient performance
  • Low EMI
  • Excellent current sharing in parallel operation
  • 10μs Short-circuit capability

 

Product Information

DC Collector Current:
13A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
90W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Motor Drive & Control;
  • Consumer Electronics;
  • Lighting;
  • Alternative Energy;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

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