Low

INFINEON  IRGB6B60KDPBF  IGBT Single Transistor, 13 A, 1.8 V, 90 W, 600 V, TO-220AB, 3 Pins

INFINEON IRGB6B60KDPBF
INFINEON IRGB6B60KDPBF
Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRGB6B60KDPBF
Newark Part No.:
63J7445
Technical Datasheet:
See all Technical Docs
INFINEON IRGB6B60KDPBF
INFINEON IRGB6B60KDPBF

The actual product may differ from image shown

Product Overview

The IRGB6B60KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features low VCE (on) non-punch through IGBT technology and ultra-soft diode reverse recovery characteristics.
  • Low diode VF
  • Square RBSOA
  • Positive VCE (on) temperature coefficient
  • Rugged transient performance
  • Low EMI
  • Excellent current sharing in parallel operation
  • 10μs Short-circuit capability

Product Information

DC Collector Current:
13A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
90W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Motor Drive & Control
  • Consumer Electronics
  • Lighting
  • Alternative Energy
  • Power Management

Legislation and Environmental

Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.