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INFINEON  IRG4PH50UDPBF  IGBT Single Transistor, 45 A, 1.2 kV, 200 W, 1.2 kV, TO-247AC, 3 Pins

INFINEON IRG4PH50UDPBF
Technical Data Sheet (232.07KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRG4PH50UDPBF is a 1200V short-circuit rated Copack (Insulated Gate Bipolar Transistor) IGBT with ultrafast soft recovery diode. It is optimized for high operating frequencies up to 40kHz in hard switching, >200kHz in resonant mode. This IGBT design provides tighter parameter distribution and higher efficiency than previous generations. IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
  • Higher switching frequency capability than competitive IGBTs
  • Highest efficiency available
  • HEXFRED diodes optimized for performance with IGBT's
  • Minimized recovery characteristics require less/no snubbing
  • Planar IGBT technology
  • Ultrafast 8 to 30kHz switching speed
  • ±20V Gate to emitter voltage
  • 0.64°C/W IGBT thermal resistance, junction to case
  • 0.83°C/W Diode thermal resistance, junction to case

 

Product Information

DC Collector Current:
45A
Collector Emitter Saturation Voltage Vce(on):
1.2kV
Power Dissipation Pd:
200W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
IRG4 Series
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Alternative Energy;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Associated Products

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