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INFINEON  IRG4PC40FDPBF  IGBT Single Transistor, 49 A, 1.85 V, 160 W, 600 V, TO-247AC, 3 Pins

INFINEON IRG4PC40FDPBF
Technical Data Sheet (219.68KB) EN See all Technical Docs

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Product Overview

The IRG4PC40FDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It is optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. The HEXFRED® diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing.
  • Optimized for specific application conditions
  • Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

 

Product Information

DC Collector Current:
49A
Collector Emitter Saturation Voltage Vce(on):
1.85V
Power Dissipation Pd:
160W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
IRG4 Series
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

IGBT Single Transistor, 60 A, 1.7 V, 200 W, 600 V, TO-247, 3 Pins

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