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INFINEON  IRFR3910PBF  MOSFET Transistor, N Channel, 16 A, 100 V, 0.115 ohm, 10 V, 4 V

INFINEON IRFR3910PBF
Technical Data Sheet (392.40KB) EN See all Technical Docs

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Product Overview

The IRFR3910PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
  • Advanced process technology
  • Fast switching
  • Fully avalanche rating
  • Low static drain-to-source ON-resistance
  • Dynamic dV/dt rating

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
16A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.115ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
52W
Transistor Case Style:
TO-252
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex
Authorized Distributor

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