Low

INFINEON  IRFP250NPBF  MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V

INFINEON IRFP250NPBF

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRFP250NPBF

Product Overview

The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage (Vds) of 200V
  • Gate to source voltage of ±20V
  • On resistance Rds(on) of 75mohm at Vgs 10V
  • Power dissipation Pd of 214W at 25°C
  • Continuous drain current Id of 30A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics

Customers Also bought

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
30A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.075ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
214W
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Substitutes

Associated Products

Recently Viewed

Product Recommendations