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INFINEON  IRFB4127PBF  MOSFET Transistor, N Channel, 76 A, 200 V, 17 mohm, 20 V, 5 V

INFINEON IRFB4127PBF
Technical Data Sheet (291.47KB) EN See all Technical Docs

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Product Overview

The IRFB4127PBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
  • Improved gate, avalanche and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
76A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.017ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
5V
Power Dissipation Pd:
375W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products