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INFINEON  IRF9Z34NPBF  MOSFET Transistor, P Channel, -19 A, -55 V, 100 mohm, -10 V, -4 V

INFINEON IRF9Z34NPBF
INFINEON IRF9Z34NPBF
Technical Data Sheet (240.46KB) EN See all Technical Docs

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INFINEON IRF9Z34NPBF
INFINEON IRF9Z34NPBF

Product Overview

The IRF9Z34NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
  • Advanced process technology
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175°C Operating temperature

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-19A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
56W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products