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INFINEON  IRF9Z34NLPBF  MOSFET Transistor, P Channel, -19 A, -55 V, 100 mohm, -10 V, -4 V

INFINEON IRF9Z34NLPBF
INFINEON IRF9Z34NLPBF
Technical Data Sheet (1.08MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

INFINEON IRF9Z34NLPBF
INFINEON IRF9Z34NLPBF

Product Overview

The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Fast switching
  • Fully avalanche rated
  • Dynamic dv/dt rating

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-19A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
68W
Transistor Case Style:
TO-262
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Y-Ex

Associated Products