INTERNATIONAL RECTIFIER  IRF9Z34NLPBF  MOSFET Transistor, P Channel, -19 A, -55 V, 100 mohm, -10 V, -4 V


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Product Overview

The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Fast switching
  • Fully avalanche rated
  • Dynamic dv/dt rating


Power Management
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Product Information

  • Transistor Polarity P Channel
  • Continuous Drain Current Id -19A
  • Drain Source Voltage Vds -55V
  • On Resistance Rds(on) 0.1ohm
  • Rds(on) Test Voltage Vgs -10V
  • Threshold Voltage Vgs -4V
  • Power Dissipation Pd 68W
  • Transistor Case Style TO-262
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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Availability:  597

  • 597 in stock for same day shipping
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    More stock available week commencing 6/13/16

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Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.18 $2.18



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1 - 9 $2.18
10 - 99 $1.37
100 - 249 $0.995
250 - 499 $0.937
500 - 999 $0.879
1000+ $0.826

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