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INFINEON  IRF9Z34NLPBF  MOSFET Transistor, P Channel, -19 A, -55 V, 100 mohm, -10 V, -4 V

INFINEON IRF9Z34NLPBF
INFINEON IRF9Z34NLPBF
Technical Data Sheet (1.08MB) EN See all Technical Docs

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INFINEON IRF9Z34NLPBF
INFINEON IRF9Z34NLPBF

Product Overview

The IRF9Z34NLPBF is a P-channel HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This low-profile through-hole transistor benefits, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Fast switching
  • Fully avalanche rated
  • Dynamic dv/dt rating

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-19A
Drain Source Voltage Vds:
-55V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
68W
Transistor Case Style:
TO-262
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products