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INFINEON  IRF9956PBF  Dual MOSFET, Dual N Channel, 3.5 A, 30 V, 100 mohm, 10 V, 1 V

INFINEON IRF9956PBF
Technical Data Sheet (169.85KB) EN See all Technical Docs

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Product Overview

The IRF9956PBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
  • Generation V technology
  • Ultra low ON-resistance
  • Surface-mount device
  • Very low gate charge and switching losses
  • Fully avalanche rated

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
3.5A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.1ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

Dual MOSFET, Dual N Channel, 3.5 A, 30 V, 90 mohm, 10 V, 1.8 V

FAIRCHILD SEMICONDUCTOR

0

Price for: Each (Supplied on Cut Tape)

1000+ $0.352

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