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INFINEON  IRF9520NSPBF  MOSFET Transistor, P Channel, -6.8 A, -100 V, 480 mohm, -10 V, -4 V

INFINEON IRF9520NSPBF
Technical Data Sheet (160.85KB) EN See all Technical Docs

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Product Overview

The IRF9520NSPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable device. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
  • Advanced process technology
  • Fast switching
  • Fully avalanche rating
  • Dynamic dV/dt rating

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-6.8A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.48ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
3.8W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Automotive;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex
Authorized Distributor