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INFINEON  IRF7351PBF  MOSFET Transistor, N Channel, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V

INFINEON IRF7351PBF
Technical Data Sheet (282.05KB) EN See all Technical Docs

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Product Overview

The IRF7351PBF is a 60V dual N-channel HEXFET Power MOSFET ideal for low power motor drive systems. It is compatible with existing surface mount techniques. This synchronous rectifier MOSFET is designed for isolated DC-DC converters.
  • Ultra-low gate impedance
  • Fully characterized avalanche voltage and current
  • Trench MOSFET technology
  • ±20V Gate to source voltage
  • 0.016W/°C Linear derating factor
  • 50A Avalanche current (IAR)
  • 20°C/W Thermal resistance, junction to drain lead
  • 62.5°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.0137ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Power Management;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products