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INFINEON  IRF7341TRPBF  Dual MOSFET, Dual N Channel, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V

INFINEON IRF7341TRPBF
Technical Data Sheet (158.39KB) EN See all Technical Docs

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Product Overview

The IRF7341TRPBF is a dual N-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
  • Generation V technology
  • Ultra low ON-resistance
  • Surface-mount device
  • Dynamic dV/dt rating
  • Fast switching performance

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
4.7A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.043ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products