Low

INFINEON  IRF7204TRPBF  MOSFET Transistor, P Channel, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V

INFINEON IRF7204TRPBF
Technical Data Sheet (145.19KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The IRF7204TRPBF is a HEXFET® fifth generation single P-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
  • Advanced process technology
  • Dynamic dV/dt rating
  • Fast switching
  • Low static drain-to-source ON-resistance
  • Fully avalanche rating

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-5.3A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-2.5V
Power Dissipation Pd:
2.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Associated Products