Low

IRF7105PBF - 

Dual MOSFET, N and P Channel, 3.5 A, 25 V, 100 mohm, 10 V, 3 V

INFINEON IRF7105PBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF7105PBF
Newark Part No.:
19K8223
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
2W
:
3V
:
-
:
150°C
:
3.5A
:
8Pins
:
10V
:
N and P Channel
:
-
:
SOIC
:
100mohm
:
25V
:
MSL 1 - Unlimited
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Product Overview

The IRF7105PBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
  • Advanced process technology
  • Ultra low ON-resistance
  • Surface-mount device
  • Dynamic dV/dt rating
  • Fast switching performance

Applications

Industrial, Power Management