INTERNATIONAL RECTIFIER  IRF640NSPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF640NSPBF

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Product Overview


The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Easy to parallel
  • Simple drive requirement

Applications

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Product Specifications, Documents & More


  • Continuous Drain Current Id: 18A
  • Drain Source Voltage Vds: 200V
  • MSL: MSL 1 - Unlimited
  • No. of Pins: 3
  • On Resistance Rds(on): 0.15ohm
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 150W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-263
  • Transistor Polarity: N Channel

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Availability

Availability:  355


  • 355 in stock for same day shipping
 
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    More stock available week commencing 3/21/16

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1 - 9 $1.32
10 - 99 $0.865
100 - 249 $0.659
250 - 499 $0.619
500 - 999 $0.582
1000 - 2499 $0.552
2500 - 9999 $0.534
10000+ $0.49
 
 
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Substitutes


  Newark Part No. Manufacturer Part No Manufacturer / Description
Availability Price Qty
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Upgrade
10R3466
IRFS4620PBF

IRFS4620PBF

INTERNATIONAL RECTIFIER

MOSFET Transistor, N Channel, 24 A, 200 V, 0.0637 ohm, 10 V, 3 V

Price for: Each 1

1+ $0.671 Promotional price 10+ $0.671 Promotional price 100+ $0.671 Promotional price 250+ $0.671 Promotional price

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