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INTERNATIONAL RECTIFIER  IRF640NSPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF640NSPBF

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Product Overview

The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Easy to parallel
  • Simple drive requirement

Applications

Power Management

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Y-Ex

Applications

  • Power Management

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