Low

INFINEON  IRF640NSPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INFINEON IRF640NSPBF
Technical Data Sheet (336.00KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Easy to parallel
  • Simple drive requirement

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Y-Ex
Authorized Distributor

Associated Products