INTERNATIONAL RECTIFIER  IRF640NSPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF640NSPBF

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Product Overview


The IRF640NSPBF is a 200V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
  • 175°C Operating temperature
  • Fully avalanche rated
  • Dynamic dV/dt rating
  • Easy to parallel
  • Simple drive requirement

Applications

Power Management
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Product Information


  • Transistor Polarity N Channel
  • Continuous Drain Current Id 18A
  • Drain Source Voltage Vds 200V
  • On Resistance Rds(on) 0.15ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 150W
  • Transistor Case Style TO-263
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL MSL 1 - Unlimited
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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  •  131/300
  •  132/300

Availability

Availability:  300


  • 300 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 6/6/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.66 $1.66

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Price

Quantity List Price
1 - 9 $1.66
10 - 99 $1.04
100 - 249 $0.758
250 - 499 $0.714
500 - 999 $0.67
1000+ $0.63
 
 
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