INTERNATIONAL RECTIFIER  IRF640NPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF640NPBF

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Product Overview


The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 200V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 150mohm
  • Power dissipation Pd of 150W at 25°C
  • Continuous drain current Id of 18A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Specifications, Documents & More


  • Transistor Polarity N Channel
  • Continuous Drain Current Id 18A
  • Drain Source Voltage Vds 200V
  • On Resistance Rds(on) 0.15ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 150W
  • Transistor Case Style TO-220AB
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

Availability

Availability:  2,283


  • 2,283 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 6/6/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.86 $1.86

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Price

Quantity List Price
1 - 9 $1.86
10 - 99 $1.23
100 - 249 $0.931
250 - 499 $0.874
500 - 999 $0.822
1000 - 2499 $0.78
2500 - 9999 $0.754
10000+ $0.692
 
 
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INTERNATIONAL RECTIFIER

MOSFET Transistor, N Channel, 25 A, 200 V, 60 mohm, 10 V, 3 V

Availability:​ 4  

Price for: Each

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