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IRF640NPBF - 

MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INFINEON IRF640NPBF
INFINEON IRF640NPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF640NPBF
Newark Part No.:
63J7351
Technical Datasheet:
(EN)
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Product Information

:
150W
:
4V
:
-
:
175°C
:
18A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-220AB
:
150mohm
:
200V
:
-
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Product Overview

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 200V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 150mohm
  • Power dissipation Pd of 150W at 25°C
  • Continuous drain current Id of 18A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

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