INTERNATIONAL RECTIFIER  IRF640NPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF640NPBF

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Product Overview


The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 200V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 150mohm
  • Power dissipation Pd of 150W at 25°C
  • Continuous drain current Id of 18A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Specifications, Documents & More


  • Continuous Drain Current Id: 18A
  • Drain Source Voltage Vds: 200V
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.15ohm
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 150W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel

Availability

Availability:  1,656


  • 1,656 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 3/7/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.16 $2.16

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Price

Quantity List Price
1 - 9 $2.16
10 - 99 $1.43
100 - 249 $1.09
250 - 499 $1.02
500 - 999 $0.956
1000 - 2499 $0.908
2500 - 9999 $0.878
10000+ $0.805
 
 
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INTERNATIONAL RECTIFIER

MOSFET Transistor, N Channel, 25 A, 200 V, 60 mohm, 10 V, 3 V

50 

Price for: Each 1

1+ $2.16 Promotional price 10+ $1.98 Promotional price 100+ $1.83 Promotional price 250+ $1.83 Promotional price

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