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INFINEON  IRF640NPBF  MOSFET Transistor, N Channel, 18 A, 200 V, 150 mohm, 10 V, 4 V

INFINEON IRF640NPBF
INFINEON IRF640NPBF
Technical Data Sheet (336.00KB) EN See all Technical Docs

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INFINEON IRF640NPBF
INFINEON IRF640NPBF

Product Overview

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 200V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 150mohm
  • Power dissipation Pd of 150W at 25°C
  • Continuous drain current Id of 18A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
18A
Drain Source Voltage Vds:
200V
On Resistance Rds(on):
0.15ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

MOSFET Transistor, N Channel, 25 A, 200 V, 60 mohm, 10 V, 3 V

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