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IRF540NPBF - 

MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

INFINEON IRF540NPBF
INFINEON IRF540NPBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF540NPBF
Newark Part No.:
63J7319
Technical Datasheet:
(EN)
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Product Information

:
130mW
:
4V
:
-
:
175°C
:
33A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-220AB
:
44mohm
:
100V
:
-
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Product Overview

The IRF540NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 44mohm at Vgs of 10V
  • Power dissipation Pd of 130W at 25°C
  • Continuous drain current Id of 33A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management, Industrial, Portable Devices, Consumer Electronics

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MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

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