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INFINEON  IRF530NPBF  MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V

INFINEON IRF530NPBF
INFINEON IRF530NPBF
Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF530NPBF
Newark Part No.:
63J7312
Technical Datasheet:
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INFINEON IRF530NPBF
INFINEON IRF530NPBF

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Product Overview

The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 90mohm at Vgs of 10V
  • Power dissipation Pd of 70W at 25°C
  • Continuous drain current Id of 17A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
17A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.09ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
79W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

Substitutes

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