INTERNATIONAL RECTIFIER  IRF530NPBF  MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V


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Product Overview

The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 90mohm at Vgs of 10V
  • Power dissipation Pd of 70W at 25°C
  • Continuous drain current Id of 17A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C


Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 17A
  • Drain Source Voltage Vds 100V
  • On Resistance Rds(on) 0.09ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 79W
  • Transistor Case Style TO-220AB
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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