INTERNATIONAL RECTIFIER  IRF530NPBF  MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF530NPBF

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Product Overview


The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 90mohm at Vgs of 10V
  • Power dissipation Pd of 70W at 25°C
  • Continuous drain current Id of 17A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Information


  • Transistor Polarity N Channel
  • Continuous Drain Current Id 17A
  • Drain Source Voltage Vds 100V
  • On Resistance Rds(on) 0.09ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 79W
  • Transistor Case Style TO-220AB
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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Availability

Availability:  2,327


  • 2,327 in stock for same day shipping
 
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    More stock available week commencing 6/6/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $1.54 $1.54

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1 - 9 $1.54
10 - 99 $0.959
100 - 249 $0.701
250 - 499 $0.66
500 - 999 $0.619
1000+ $0.582
 
 
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Substitutes


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Suggested Substitutes
63J7319
IRF540NPBF

IRF540NPBF

INTERNATIONAL RECTIFIER

MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

Availability:​ 1,288  

Price for: Each

1+ $1.57 10+ $1.04 100+ $0.788 250+ $0.74 More pricing

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More stock available week commencing 6/6/16

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