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INTERNATIONAL RECTIFIER  IRF530NPBF  MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF530NPBF

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INTERNATIONAL RECTIFIER IRF530NPBF

Product Overview

The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 90mohm at Vgs of 10V
  • Power dissipation Pd of 70W at 25°C
  • Continuous drain current Id of 17A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C

Applications

Power Management; Industrial; Portable Devices; Consumer Electronics

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Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
17A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.09ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
79W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Power Management;
  • Industrial;
  • Portable Devices;
  • Consumer Electronics

Substitutes

MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER

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