INTERNATIONAL RECTIFIER  IRF530NPBF  MOSFET Transistor, N Channel, 17 A, 100 V, 90 mohm, 10 V, 4 V


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Product Overview

The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
  • Drain to source voltage Vds is 100V
  • Gate to source voltage is ±20V
  • On resistance Rds(on) of 90mohm at Vgs of 10V
  • Power dissipation Pd of 70W at 25°C
  • Continuous drain current Id of 17A at Vgs 10V and 25°C
  • Operating junction temperature range from -55°C to 175°C


Power Management; Industrial; Portable Devices; Consumer Electronics
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Product Specifications, Documents & More

  • Continuous Drain Current Id: 17A
  • Drain Source Voltage Vds: 100V
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.09ohm
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 79W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel

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Suggested Substitutes



MOSFET Transistor, N Channel, 33 A, 100 V, 44 mohm, 10 V, 4 V


Price for: Each 1

1+ $1.82 10+ $1.20 100+ $0.913 250+ $0.857


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