Low

INTERNATIONAL RECTIFIER  IRF5210PBF  MOSFET Transistor, P Channel, -40 A, -100 V, 60 mohm, -10 V, -4 V

INTERNATIONAL RECTIFIER IRF5210PBF

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INTERNATIONAL RECTIFIER IRF5210PBF

Product Overview

The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.
  • Advanced Process Technology
  • New Ultra Low On-Resistance
  • Fast Switching
  • Dynamic dv/dt Rating
  • Fully Avalanche Rated

Applications

Audio; Industrial

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-40A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.06ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes

Applications

  • Audio;
  • Industrial

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