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INFINEON  IRF3710ZPBF  MOSFET Transistor, N Channel, 59 A, 100 V, 18 mohm, 10 V, 4 V

INFINEON IRF3710ZPBF
INFINEON IRF3710ZPBF
Technical Data Sheet (272.82KB) EN See all Technical Docs

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INFINEON IRF3710ZPBF
INFINEON IRF3710ZPBF

Product Overview

The IRF3710ZPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Ultra-low ON-resistance
  • Dynamic dV/dt rating
  • Repetitive avalanche allowed up to Tjmax

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
59A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.018ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
160W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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