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IRF3710PBF - 

MOSFET Transistor, N Channel, 57 A, 100 V, 0.023 ohm, 10 V, 4 V

INFINEON IRF3710PBF
INFINEON IRF3710PBF

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF3710PBF
Newark Part No.:
63J7283
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
200W
:
4V
:
-
:
175°C
:
57A
:
3Pins
:
10V
:
N Channel
:
-
:
TO-220AB
:
0.023ohm
:
100V
:
-
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Product Overview

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175°C Operating temperature

Applications

Power Management

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FAIRCHILD SEMICONDUCTOR

MOSFET Transistor, N Channel, 56 A, 100 V, 25 mohm, 10 V, 4 V

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