INTERNATIONAL RECTIFIER  IRF3710PBF  MOSFET Transistor, N Channel, 57 A, 100 V, 0.023 ohm, 10 V, 4 V


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Product Overview

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175°C Operating temperature


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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 57A
  • Drain Source Voltage Vds 100V
  • On Resistance Rds(on) 0.023ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 200W
  • Transistor Case Style TO-220AB
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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Availability:  885

  • 885 in stock for same day shipping
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    More stock available week commencing 6/13/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.44 $2.44



Quantity List Price
1 - 9 $2.44
10 - 99 $1.61
100 - 249 $1.23
250 - 499 $1.15
500 - 999 $1.08
1000 - 2499 $1.03
2500 - 9999 $0.991
10000+ $0.909

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Suggested Substitutes



MOSFET Transistor, N Channel, 56 A, 100 V, 25 mohm, 10 V, 4 V

Availability:​ 804  

Price for: Each

1+ $1.92 10+ $1.55 100+ $1.24 500+ $1.09 More pricing


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More stock available week commencing 6/20/16

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