INTERNATIONAL RECTIFIER  IRF3710PBF  MOSFET Transistor, N Channel, 57 A, 100 V, 0.023 ohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF3710PBF

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Product Overview


The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175°C Operating temperature

Applications

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Product Specifications, Documents & More


  • Continuous Drain Current Id: 57A
  • Drain Source Voltage Vds: 100V
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.023ohm
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 200W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel

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Availability

Availability:  916


  • 916 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 3/14/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.66 $2.66

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Price

Quantity List Price
1 - 9 $2.66
10 - 99 $1.75
100 - 249 $1.33
250 - 499 $1.25
500 - 999 $1.18
1000 - 2499 $1.12
2500 - 9999 $1.08
10000+ $0.989
 
 
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Substitutes


  Newark Part No. Manufacturer Part No Manufacturer / Description
Availability Price Qty
ascdsc ascdsc ascdsc ascdsc ascdsc
Suggested Substitutes
58K1612
HUF75639P3

HUF75639P3

FAIRCHILD SEMICONDUCTOR

MOSFET Transistor, N Channel, 56 A, 100 V, 25 mohm, 10 V, 4 V

53 

Price for: Each 1

1+ $1.92 10+ $1.55 100+ $1.24 500+ $1.09

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see cut-off times

 
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    More stock available week commencing 3/28/16

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