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INFINEON  IRF3710PBF  MOSFET Transistor, N Channel, 57 A, 100 V, 0.023 ohm, 10 V, 4 V

INFINEON IRF3710PBF
INFINEON IRF3710PBF
Technical Data Sheet (218.87KB) EN See all Technical Docs

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INFINEON IRF3710PBF
INFINEON IRF3710PBF

Product Overview

The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Advanced process technology
  • Ultra low on-resistance
  • Dynamic dV/dt rating
  • Fully avalanche rated
  • 175°C Operating temperature

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
57A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.023ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
200W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

Substitutes

MOSFET Transistor, N Channel, 56 A, 100 V, 25 mohm, 10 V, 4 V

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