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INTERNATIONAL RECTIFIER  IRF350  MOSFET Transistor, N Channel, 14 A, 400 V, 300 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF350
Technical Data Sheet (144.84KB) EN See all Technical Docs

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Product Overview

The IRF350 is a 400V single N-channel HEXFET® MOSFET features efficient geometry and unique processing of this latest state-of-the-art design achieves, very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. The HEXFET transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
  • Repetitive avalanche rating
  • Dynamic dV/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Easy to parallel

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
14A
Drain Source Voltage Vds:
400V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-204AA
No. of Pins:
2Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
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Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability

Substitutes

MOSFET Transistor, N Channel, 14 A, 400 V, 0.4 ohm, 10 V, 2 V

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