INTERNATIONAL RECTIFIER  IRF3205PBF  MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V

INTERNATIONAL RECTIFIER IRF3205PBF

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Product Overview


The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Fast switching
  • ±20V Gate-source voltage

Applications

Power Management
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Product Specifications, Documents & More


  • Continuous Drain Current Id: 110A
  • Drain Source Voltage Vds: 55V
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.008ohm
  • Operating Temperature Max: 175°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 150W
  • Rds(on) Test Voltage Vgs: 10V
  • SVHC: No SVHC (15-Jun-2015)
  • Threshold Voltage Vgs Typ: 4V
  • Transistor Case Style: TO-220AB
  • Transistor Polarity: N Channel

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Availability

Availability:  991


  • 991 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 3/14/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $2.66 $2.66

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Price

Quantity List Price
1 - 9 $2.66
10 - 99 $1.75
100 - 249 $1.34
250 - 499 $1.25
500 - 999 $1.18
1000 - 2499 $1.12
2500 - 9999 $1.08
10000+ $0.99
 
 
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Substitutes


  Newark Part No. Manufacturer Part No Manufacturer / Description
Availability Price Qty
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19M4158
IRFB3306PBF

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INTERNATIONAL RECTIFIER

MOSFET Transistor, N Channel, 160 A, 60 V, 4.2 mohm, 10 V, 4 V

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Price for: Each 1

500+ $1.46 1000+ $1.39 2500+ $1.34 10000+ $1.23

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    More stock available week commencing 6/6/16

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