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IRF3205PBF - 

MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V

IRF3205PBF - MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V
IRF3205PBF - MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
IRF3205PBF
Newark Part No.:
63J7236
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Fast switching
  • ±20V Gate-source voltage

Applications

Power Management

Product Information

:
N Channel
:
110A
:
55V
:
8mohm
:
10V
:
4V
:
150W
:
TO-220AB
:
3Pins
:
175°C
:
-
:
-
:
-
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