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INFINEON  IRF3205PBF  MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V

INFINEON IRF3205PBF
INFINEON IRF3205PBF
Technical Data Sheet (215.96KB) EN See all Technical Docs

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INFINEON IRF3205PBF
INFINEON IRF3205PBF

Product Overview

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Fast switching
  • ±20V Gate-source voltage

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
110A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.008ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-220AB
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products