INTERNATIONAL RECTIFIER  IRF3205PBF  MOSFET Transistor, N Channel, 110 A, 55 V, 8 mohm, 10 V, 4 V


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Product Overview

The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
  • Dynamic dv/dt rating
  • Fully avalanche rated
  • Fast switching
  • ±20V Gate-source voltage


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Product Information

  • Transistor Polarity N Channel
  • Continuous Drain Current Id 110A
  • Drain Source Voltage Vds 55V
  • On Resistance Rds(on) 0.008ohm
  • Rds(on) Test Voltage Vgs 10V
  • Threshold Voltage Vgs 4V
  • Power Dissipation Pd 150W
  • Transistor Case Style TO-220AB
  • No. of Pins 3Pins
  • Operating Temperature Max 175°C
  • MSL -
  • Operating Temperature Min -55 °C
  • SVHC No SVHC (17-Dec-2015)

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Availability:  742

  • 742 in stock for same day shipping
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    More stock available week commencing 6/6/16

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1 - 9 $2.29
10 - 99 $1.51
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250 - 499 $1.08
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1000 - 2499 $0.96
2500 - 9999 $0.928
10000+ $0.852

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MOSFET Transistor, N Channel, 160 A, 60 V, 4.2 mohm, 10 V, 4 V

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