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INFINEON  IR2125PBF  MOSFET Driver Single, High Side, 0V-18V supply, 3.3A peak out, DIP-8

INFINEON IR2125PBF
Technical Data Sheet (210.59KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IR2125PBF is a 1-channel high voltage high speed power MOSFET and IGBT Driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs and down to 2.5V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high or low-side configuration which operates up to 500V.
  • Tolerant to negative transient voltage DV/DT Immune
  • Under-voltage lockout
  • Current detection and limiting loop to limit driven power transistor current
  • Error lead indicates fault conditions and programs shutdown time
  • Output in phase with input

 

Product Information

Driver Configuration:
High Side
Peak Output Current:
3.3A
Supply Voltage Min:
0V
Supply Voltage Max:
18V
Driver Case Style:
DIP
No. of Pins:
8Pins
Input Delay:
170ns
Output Delay:
200ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Module Configuration:
High Side
Device Type:
MOSFET Driver
MSL:
-
Supply Voltage Range:
0V to 18V
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Industrial;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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