INTERNATIONAL RECTIFIER  2N6849  MOSFET Transistor, P Channel, -6.5 A, -100 V, 300 mohm, -10 V, -4 V

Technical Data Sheet (233.06KB) EN See all Technical Docs

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Product Overview

The 2N6849 is a -100V single P-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves very low on-state resistance combined with high transconductance. The IRFF9130 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Ease of paralleling ESD rating - Class 1C per MIL-STD-750, method 1020
  • ±20V Gate to source voltage
  • 0.20W/°C Linear derating factor
  • -6.5A Avalanche current (IAR)
  • 5°C/W Thermal resistance, junction to case
  • 175°C/W Thermal resistance, junction to ambient
ESD sensitive device, take proper precaution while handling the device.


Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
Drain Source Voltage Vds:
On Resistance Rds(on):
Rds(on) Test Voltage Vgs:
Threshold Voltage Vgs:
Power Dissipation Pd:
Transistor Case Style:
No. of Pins:
Operating Temperature Max:
Product Range:
Automotive Qualifications Standard:
No SVHC (17-Dec-2015)

Find similar products  grouped by common attribute


  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Industrial;
  • Defence, Military & Aerospace

Legislation and Environmental

Moisture Sensitivity Level:
RoHS Compliant:
Authorized Distributor

Associated Products