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INTERNATIONAL RECTIFIER  2N6849  MOSFET Transistor, P Channel, -6.5 A, -100 V, 300 mohm, -10 V, -4 V

INTERNATIONAL RECTIFIER 2N6849
Manufacturer Part No:
2N6849
Newark Part No.:
74C0976
Technical Datasheet:
See all Technical Docs

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Product Overview

The 2N6849 is a -100V single P-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and uniq...
  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Ease of paralleling ESD rating - Class 1C per MIL-STD-750, method 1020
  • ±20V Gate to source voltage
  • 0.20W/°C Linear derating factor
  • -6.5A Avalanche current (IAR)
  • 5°C/W Thermal resistance, junction to case
  • 175°C/W Thermal resistance, junction to ambient
ESD sensitive device, take proper precaution while handling the device.

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-6.5A
Drain Source Voltage Vds:
-100V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
-10V
Threshold Voltage Vgs:
-4V
Power Dissipation Pd:
25W
Transistor Case Style:
TO-205AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Industrial;
  • Defence, Military & Aerospace

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
No
Authorized Distributor

Associated Products