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INFINEON  2N6788  MOSFET Transistor, N Channel, 6 A, 100 V, 300 mohm, 10 V, 4 V

INFINEON 2N6788
Technical Data Sheet (198.87KB) EN See all Technical Docs

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Product Overview

The 2N6788 is a HEXFET® N-channel Power MOSFET suitable for inverters, choppers and high energy pulse circuit. The efficient geometry and unique processing of this latest state of the art design achieves very low ON-state resistance combined with high transconductance. The HEXFET® transistor also features all of the well established advantages of MOSFET such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
  • Repetitive avalanche rating
  • Dynamic dV/dt rating
  • Hermetically sealed
  • Simple drive requirements

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.3ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
20W
Transistor Case Style:
TO-205AD
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Industrial;
  • Defence, Military & Aerospace

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
No
Authorized Distributor

Associated Products