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2N6770 - 

MOSFET Transistor, N Channel, 12 A, 500 V, 400 mohm, 10 V, 4 V

INFINEON 2N6770

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Manufacturer:
INFINEON INFINEON
Manufacturer Part No:
2N6770
Newark Part No.:
09F6537
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
150W
:
4V
:
-
:
150°C
:
12A
:
2Pins
:
10V
:
N Channel
:
-
:
TO-204AA
:
400mohm
:
500V
:
-
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Product Overview

The 2N6770 is an N-channel Hi-Rel MOSFET Power Transistor features an efficient geometry and unique processing of this latest state of the art design achieves very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. This IRF450 HEXFET technology MOSFET features voltage control, very fast switching and ease of paralleling and temperature stability of the electrical parameters.
  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Ease of paralleling

Applications

Defence, Military & Aerospace, Commercial, Power Management

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