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INFINEON  2N6770  MOSFET Transistor, N Channel, 12 A, 500 V, 400 mohm, 10 V, 4 V

INFINEON 2N6770
Technical Data Sheet (144.64KB) EN See all Technical Docs

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Product Overview

The 2N6770 is an N-channel Hi-Rel MOSFET Power Transistor features an efficient geometry and unique processing of this latest state of the art design achieves very low on-state resistance combined with high transconductance, superior reverse energy and diode recovery dv/dt capability. This IRF450 HEXFET technology MOSFET features voltage control, very fast switching and ease of paralleling and temperature stability of the electrical parameters.
  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Ease of paralleling

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
12A
Drain Source Voltage Vds:
500V
On Resistance Rds(on):
0.4ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-204AA
No. of Pins:
2Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Defence, Military & Aerospace;
  • Commercial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
No

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