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INFINEON  2N6764  MOSFET Transistor, N Channel, 38 A, 100 V, 55 mohm, 10 V, 4 V

INFINEON 2N6764
Technical Data Sheet (150.48KB) EN See all Technical Docs

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Product Overview

The 2N6764 is a 100V single N-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves very low on-state resistance combined with high transconductance. The IRF150 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
  • Repetitive avalanche ratings
  • Dynamic dv/dt rating
  • Hermetically sealed
  • Simple drive requirements
  • Ease of paralleling
  • ±20V Gate to source voltage
  • 1.2W/°C Linear derating factor
  • 38A Avalanche current (IAR)
  • 0.83°C/W Thermal resistance, junction to case
  • 30°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
38A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.055ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
4V
Power Dissipation Pd:
150W
Transistor Case Style:
TO-204AA
No. of Pins:
2Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
No SVHC (17-Dec-2015)

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Applications

  • Power Management;
  • Motor Drive & Control;
  • Audio;
  • Industrial;
  • Defence, Military & Aerospace

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
No
Authorized Distributor

Associated Products