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INFINEON  IKW30N60H3  IGBT Single Transistor, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins

INFINEON IKW30N60H3
Technical Data Sheet (2.13MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
  • Low switching losses for high efficiency
  • Fast switching behaviour with low EMI emissions
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Excellent performance
  • Low switching and conduction losses

 

Product Information

DC Collector Current:
30A
Collector Emitter Saturation Voltage Vce(on):
2.4V
Power Dissipation Pd:
187W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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