Low

INFINEON  IHW30N160R2  IGBT Single Transistor, 60 A, 1.8 V, 312 W, 1.6 kV, TO-247, 3 Pins

INFINEON IHW30N160R2
Technical Data Sheet (391.05KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The IHW30N160R2 is a TrenchStop® Reverse Conducting (RC-) IGBT with monolithic body diode with very low forward voltage and body diode clamps negative voltages. Qualified according to JEDEC for target applications.
  • Very low forward voltage
  • Low EMI
  • Tighten parameter distribution
  • High ruggedness, temperature stable behaviour
  • Better thermal management

 

Product Information

DC Collector Current:
60A
Collector Emitter Saturation Voltage Vce(on):
1.8V
Power Dissipation Pd:
312W
Collector Emitter Voltage V(br)ceo:
1.6kV
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

Associated Products

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.