Low

INFINEON  IGW30N60TFKSA1  IGBT Single Transistor, 30 A, 2.05 V, 187 W, 600 V, TO-247, 3 Pins

INFINEON IGW30N60TFKSA1
Technical Data Sheet (541.34KB) EN See all Technical Docs

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Product Overview

The IGW30N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
  • Lowest Vce (sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
  • Very soft, fast recovery anti-parallel emitter controlled diode
  • High ruggedness, temperature stable behaviour
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency - Low conduction and switching losses
  • High device reliability
  • 5µs Short-circuit withstand time
  • Green product
  • Halogen-free

 

Product Information

DC Collector Current:
30A
Collector Emitter Saturation Voltage Vce(on):
2.05V
Power Dissipation Pd:
187W
Collector Emitter Voltage V(br)ceo:
600V
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualifications Standard:
-
Transistor Type:
IGBT
MSL:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Alternative Energy;
  • Consumer Electronics;
  • HVAC;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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