Low

INFINEON  FD150R12RT4  IGBT Array & Module Transistor, N Channel, 150 A, 2.05 V, 790 W, 1.2 kV

INFINEON FD150R12RT4
Technical Data Sheet (668.25KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The FD150R12RT4 is a 34mm IGBT Module with fast Trench/Fieldstop IGBT4 and emitter controlled 4 diodes. Isolated base plate with standard housing, optimal electrical performance and VCEsat with positive temperature coefficient.
  • Extended operating temperature
  • Low switch losses
  • LowVCEsat
  • High reliability
  • Flexibility

 

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
150A
Collector Emitter Saturation Voltage Vce(on):
2.05V
Power Dissipation Pd:
790W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
-
No. of Pins:
5Pins
Operating Temperature Max:
150°C
Product Range:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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