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INFINEON  BSS138N H6327  MOSFET Transistor, N Channel, 230 mA, 60 V, 3.5 ohm, 10 V, 1 V

INFINEON BSS138N H6327
Technical Data Sheet (233.83KB) EN See all Technical Docs

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Product Overview

The BSS138N H6327 from Infineon is surface mount, N channel SIPMOS small signal transistor in SOT-23 package.
  • Automotive grade AEC-Q101 qualified
  • Drain to source voltage (Vds) of 60V
  • Gate to source voltage of ±20V
  • Continuous drain current (Id) of 230mA
  • Power dissipation (pd) of 360mW
  • Operating temperature range from -55°C to 150°C
  • Low on state resistance of 2.2ohm at Vgs 10V

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
230mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
3.5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1V
Power Dissipation Pd:
360mW
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor