INFINEON  BSM10GD120DN2  IGBT Array & Module Transistor, N Channel, 15 A, 2.7 V, 80 W, 1.2 kV, EconoPACK


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  • Manufacturer:
  • Newark Part No.: 61M5051
  • Manufacturer Part No BSM10GD120DN2

Product Overview

The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.


Power Management
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Product Information

  • Transistor Polarity N Channel
  • DC Collector Current 15A
  • Collector Emitter Saturation Voltage Vce(on) 2.7V
  • Power Dissipation Pd 80W
  • Collector Emitter Voltage V(br)ceo 1.2kV
  • Transistor Case Style EconoPACK
  • No. of Pins 17Pins
  • Operating Temperature Max 125°C
  • Operating Temperature Min -40 °C
  • SVHC To Be Advised

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Availability:  12

  • 12 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 8/29/16

Price for: Each

Minimum order quantity: 1

Order multiple quantity: 1

Price: $51.61 $51.61



Quantity List Price
1 - 1 $51.61
2 - 4 $50.45
5 - 9 $48.12
10 - 24 $47.34
25+ $46.57

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