INFINEON  BSM10GD120DN2  IGBT Array & Module Transistor, N Channel, 15 A, 2.7 V, 80 W, 1.2 kV, EconoPACK

INFINEON BSM10GD120DN2

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  • Manufacturer:
  • Newark Part No.: 61M5051
  • Manufacturer Part No BSM10GD120DN2

Product Overview


The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.

Applications

Power Management
Due to technical requirements, component may contain dangerous substances.
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Product Specifications, Documents & More


  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.7V
  • DC Collector Current: 15A
  • No. of Pins: 17
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 80W
  • SVHC: To Be Advised
  • Transistor Case Style: EconoPACK
  • Transistor Polarity: N Channel

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Availability

Availability:  12


  • 12 in stock for same day shipping
 
Check stock and lead times
    More stock available week commencing 6/6/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $72.19 $72.19

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Price

Quantity List Price
1 - 9 $72.19
10 - 24 $66.89
25 - 49 $61.58
50 - 99 $56.98
100 - 249 $53.08
250+ $49.90
 
 
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