INFINEON  BSM10GD120DN2  IGBT Array & Module Transistor, N Channel, 15 A, 2.7 V, 80 W, 1.2 kV, EconoPACK


Image is for illustrative purposes only. Please refer to product description.

  • Manufacturer:
  • Newark Part No.: 61M5051
  • Manufacturer Part No BSM10GD120DN2

Product Overview

The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.


Power Management
Due to technical requirements, component may contain dangerous substances.
Back to top

Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.7V
  • DC Collector Current: 15A
  • No. of Pins: 17
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 80W
  • SVHC: To Be Advised
  • Transistor Case Style: EconoPACK
  • Transistor Polarity: N Channel

Find similar products  grouped by common attribute


Availability:  12

  • 12 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 6/6/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $72.19 $72.19



Quantity List Price
1 - 9 $72.19
10 - 24 $66.89
25 - 49 $61.58
50 - 99 $56.98
100 - 249 $53.08
250+ $49.90

Legislation and Environmental

Back to top

Similar Products

Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.

Back to top

Customer Reviews

Customer Q&A Exchange


Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.


Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.
Back to top

Customers Also Bought