INFINEON  BSM10GD120DN2  IGBT Array & Module Transistor, N Channel, 15 A, 2.7 V, 80 W, 1.2 kV, EconoPACK


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  • Manufacturer:
  • Newark Part No.: 61M5051
  • Manufacturer Part No BSM10GD120DN2

Product Overview

The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.


Power Management
Due to technical requirements, component may contain dangerous substances.
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Product Specifications, Documents & More

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.7V
  • DC Collector Current: 15A
  • No. of Pins: 17
  • Operating Temperature Max: 125°C
  • Operating Temperature Min: -40°C
  • Power Dissipation Pd: 80W
  • SVHC: To Be Advised
  • Transistor Case Style: EconoPACK
  • Transistor Polarity: N Channel

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Availability:  13

  • 13 in stock for same day shipping
Check stock and lead times
    More stock available week commencing 3/21/16

Price for: Each 1

Minimum order quantity: 1

Order multiple quantity: 1

Price: $77.92 $77.92



Quantity List Price
1 - 9 $77.92
10 - 24 $72.19
25 - 49 $66.47
50 - 99 $61.50
100 - 249 $57.30
250+ $53.86

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