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INFINEON  BSM10GD120DN2  IGBT Array & Module Transistor, N Channel, 15 A, 2.7 V, 80 W, 1.2 kV, EconoPACK

INFINEON BSM10GD120DN2
Technical Data Sheet (252.39KB) EN See all Technical Docs

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Product Overview

The BSM10GD120DN2 is a 1200V IGBT Power Module with 3-phase full-bridge and fast free-wheel diodes.

 

Product Information

Transistor Polarity:
N Channel
DC Collector Current:
15A
Collector Emitter Saturation Voltage Vce(on):
2.7V
Power Dissipation Pd:
80W
Collector Emitter Voltage V(br)ceo:
1.2kV
Transistor Case Style:
EconoPACK
No. of Pins:
17Pins
Operating Temperature Max:
125°C
Product Range:
-
Operating Temperature Min:
-40 °C
SVHC:
To Be Advised

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Applications

  • Power Management

Legislation and Environmental

RoHS Compliant:
Yes
Authorized Distributor

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