Low

GENESIC SEMICONDUCTOR  GA10SICP12-247  RF FET Transistor, 1.2 kV, 10 A, 91 W, TO-247AB

GENESIC SEMICONDUCTOR GA10SICP12-247
Technical Data Sheet (273.43KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Drain Source Voltage Vds:
1.2kV
Continuous Drain Current Id:
10A
Power Dissipation Pd:
91W
Operating Frequency Min:
-
Operating Frequency Max:
-
RF Transistor Case:
TO-247AB
No. of Pins:
3Pins
Operating Temperature Max:
-
Product Range:
-
MSL:
-
Operating Temperature Min:
175 °
SVHC:
No SVHC (17-Dec-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

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